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Product Overview
Digi-Key Part Number TK65E10N1S1X-ND
Quantity Available 1,046
Can ship immediately

Manufacturer Part Number


Description MOSFET N CH 100V 148A TO220
Expanded Description N-Channel 100V 148A (Ta) 192W (Tc) Through Hole TO-220
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks
Documents & Media
Datasheets TK65E10N1
Featured Product U-MOSⅧ-H MOSFETs
Product Attributes Select All

Toshiba Semiconductor and Storage

Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 148A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 5400pF @ 50V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 192W (Tc)
Rds On (Max) @ Id, Vgs 4.8 mOhm @ 32.5A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
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Additional Resources
Standard Package ? 50
Other Names TK65E10N1,S1X(S

14:44:12 3/25/2017

Price & Procurement

All prices are in NZD.
Price Break Unit Price Extended Price
1 4.27000 4.27
10 3.86500 38.65
25 3.45040 86.26
100 3.10500 310.50
250 2.76000 690.00
500 2.41500 1,207.50
1,000 2.00101 2,001.01
2,500 1.86300 4,657.50

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