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Product Overview
Digi-Key Part Number IRLD110PBF-ND
Quantity Available 6,755
Can ship immediately
Manufacturer

Manufacturer Part Number

IRLD110PBF

Description MOSFET N-CH 100V 1A 4-DIP
Expanded Description N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 9 Weeks
Documents & Media
Datasheets IRLD110
Video File MOSFET Technologies for Power Conversion
EDA / CAD Models ? Download from Accelerated Designs
Product Attributes Select All
Categories
Manufacturer

Vishay Siliconix

Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Vgs (Max) ±10V
FET Feature -
Power Dissipation (Max) 1.3W (Ta)
Rds On (Max) @ Id, Vgs 540 mOhm @ 600mA, 5V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)
 
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Additional Resources
Standard Package ? 100
Other Names *IRLD110PBF

09:23:43 1/17/2017

Price & Procurement
 

Quantity
All prices are in NZD.
Price Break Unit Price Extended Price
1 1.31000 1.31
10 1.16600 11.66
25 1.10760 27.69
100 0.90990 90.99
250 0.85060 212.65
500 0.75168 375.84
1,000 0.59344 593.44
2,500 0.55388 1,384.69
5,000 0.52618 2,630.91

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