BUK655R0-75C,127 NXP USA Inc. | Discrete Semiconductor Products

BUK655R0-75C,127 is Obsolete and no longer manufactured.

Available Substitutes:

Similar

FDP047N08

onsemi

In Stock: 3,381

Unit Price: $8.13000

Datasheet

Similar

IPP80N07S405AKSA1

Infineon Technologies

In Stock: 0

Unit Price: $0.00000

Datasheet

Similar

IRFB3207PBF

Infineon Technologies

In Stock: 408

Unit Price: $6.74000

Datasheet

Similar

IRFB3207ZPBF

Infineon Technologies

In Stock: 6,118

Unit Price: $6.36000

Datasheet

Similar

IRFB3307PBF

Infineon Technologies

In Stock: 100

Unit Price: $4.93000

Datasheet

Similar

IRFB3307ZPBF

Infineon Technologies

In Stock: 13

Unit Price: $4.99000

Datasheet

Similar

IXTP230N075T2

IXYS

In Stock: 326

Unit Price: $14.01000

Datasheet

View and Compare All Substitutes

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BUK655R0-75C,127
DigiKey Part Number	568-7502-5-ND
Manufacturer	NXP USA Inc.
Manufacturer Product Number	BUK655R0-75C,127
Description	MOSFET N-CH 75V 120A TO220AB
Customer Reference
Detailed Description	N-Channel 75 V 120A (Tc) 263W (Tc) Through Hole TO-220AB

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	NXP USA Inc.
Series	TrenchMOS™
Packaging	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	177 nC @ 10 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	11400 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	263W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Base Product Number	BUK65