260mA (Tj) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
TN2540N8-G MOSFET N-CH 400V 260MA TO243AA Microchip Technology	6,027 In Stock	1 : $3.11000 Cut Tape (CT) 2,000 : $2.36314 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	400 V	260mA (Tj)	4.5V, 10V	12Ohm @ 500mA, 10V	2V @ 1mA	±20V	125 pF @ 25 V	-	1.6W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-243AA (SOT-89)	TO-243AA
TP2520N8-G MOSFET P-CH 200V 260MA TO243AA Microchip Technology	2,915 In Stock	1 : $3.16325 Cut Tape (CT) 2,000 : $2.40035 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	200 V	260mA (Tj)	4.5V, 10V	12Ohm @ 200mA, 10V	2.4V @ 1mA	±20V	125 pF @ 25 V	-	1.6W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-243AA (SOT-89)	TO-243AA
TN2640LG-G MOSFET N-CH 400V 260MA 8SOIC Microchip Technology	1,694 In Stock	1 : $4.50000 Cut Tape (CT) 3,300 : $3.42375 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	400 V	260mA (Tj)	4.5V, 10V	5Ohm @ 500mA, 10V	2V @ 2mA	±20V	225 pF @ 25 V	-	1.3W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
TP5322N8-G MOSFET P-CH 220V 260MA TO243AA Microchip Technology	0 In Stock Check Lead Time	2,000 : $1.19087 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	220 V	260mA (Tj)	4.5V, 10V	12Ohm @ 200mA, 10V	2.4V @ 1mA	±20V	110 pF @ 25 V	-	1.6W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-243AA (SOT-89)	TO-243AA
TP2522N8-G MOSFET P-CH 220V 260MA TO243AA Microchip Technology	0 In Stock Check Lead Time	2,000 : $2.58642 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	220 V	260mA (Tj)	4.5V, 10V	12Ohm @ 200mA, 10V	2.4V @ 1mA	±20V	125 pF @ 25 V	-	1.6W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-243AA (SOT-89)	TO-243AA

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.