IPP029N06N Datasheet by Infineon Technologies

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(in/frineon
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-Transistor,60V
IPP029N06N
DataSheet
Rev.2.6
Final
PowerManagement&Multimarket
(iflreon Table 1 Key Performance Parameters
2
OptiMOSTMPower-Transistor,60V
IPP029N06N
Rev.2.6,2015-02-10Final Data Sheet
tab
TO-220-3
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
1Description
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter Value Unit
VDS 60 V
RDS(on),max 2.9 mΩ
ID100 A
QOSS 65 nC
QG(0V..10V) 56 nC
Type/OrderingCode Package Marking RelatedLinks
IPP029N06N PG-TO220-3 029N06N -
1) J-STD20 and JESD22
(ifileon
3
OptiMOSTMPower-Transistor,60V
IPP029N06N
Rev.2.6,2015-02-10Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
(ifileon Table 2 Maximum ratings Table 3 Thermal characteristics
4
OptiMOSTMPower-Transistor,60V
IPP029N06N
Rev.2.6,2015-02-10Final Data Sheet
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current ID
-
-
-
-
-
-
100
100
24
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=10V,TC=25°C,RthJA=50K/W
Pulsed drain current1) ID,pulse - - 400 A TC=25°C
Avalanche energy, single pulse2) EAS - - 110 mJ ID=100A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
Power dissipation Ptot -
-
-
-
136
3.0 WTC=25°C
TA=25°C,RthJA=50K/W
Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category;
DIN IEC 68-1: 55/175/56
3Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case,
bottom RthJC - 0.7 1.1 K/W -
Device on PCB,
minimal footprint RthJA - - 62 K/W -
Device on PCB,
6 cm² cooling area3) RthJA - - 40 K/W -
Soldering temperature, wave and
reflow soldering are allowed Tsold - - 260 °C Reflow MSL1
1) See figure 3 for more detailed information
2) See figure 13 for more detailed information
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
infineon Table 4 Static characteristics Table 5 Dynamic characteristics
5
OptiMOSTMPower-Transistor,60V
IPP029N06N
Rev.2.6,2015-02-10Final Data Sheet
4Electricalcharacteristics
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 60 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 2.1 2.8 3.3 V VDS=VGS,ID=75µA
Zero gate voltage drain current IDSS -
-
0.5
10
1
100 µA VDS=60V,VGS=0V,Tj=25°C
VDS=60V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
2.7
3.3
2.9
4.4 mΩVGS=10V,ID=100A
VGS=6V,ID=25A
Gate resistance1) RG0.65 1.3 1.95 Ω-
Transconductance gfs 80 160 - S |VDS|>2|ID|RDS(on)max,ID=100A
Table5Dynamiccharacteristics1)
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 4100 5125 pF VGS=0V,VDS=30V,f=1MHz
Output capacitance Coss - 980 1225 pF VGS=0V,VDS=30V,f=1MHz
Reverse transfer capacitance Crss - 39 78 pF VGS=0V,VDS=30V,f=1MHz
Turn-on delay time td(on) - 17 - ns VDD=30V,VGS=10V,ID=100A,
RG,ext,ext=3Ω
Rise time tr- 15 - ns VDD=30V,VGS=10V,ID=100A,
RG,ext,ext=3Ω
Turn-off delay time td(off) - 30 - ns VDD=30V,VGS=10V,ID=100A,
RG,ext,ext=3Ω
Fall time tf- 8 - ns VDD=30V,VGS=10V,ID=100A,
RG,ext,ext=3Ω
1) Defined by design. Not subject to production test
(imeon Table 6 Gate char e characteristics ’ Table 7 Reverse diode
6
OptiMOSTMPower-Transistor,60V
IPP029N06N
Rev.2.6,2015-02-10Final Data Sheet
Table6Gatechargecharacteristics1)
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 20 - nC VDD=30V,ID=100A,VGS=0to10V
Gate charge at threshold Qg(th) - 11 - nC VDD=30V,ID=100A,VGS=0to10V
Gate to drain charge2) Qgd - 11 15 nC VDD=30V,ID=100A,VGS=0to10V
Switching charge Qsw - 19 - nC VDD=30V,ID=100A,VGS=0to10V
Gate charge total2) Qg- 56 66 nC VDD=30V,ID=100A,VGS=0to10V
Gate plateau voltage Vplateau - 4.8 - V VDD=30V,ID=100A,VGS=0to10V
Gate charge total, sync. FET Qg(sync) - 49 - nC VDS=0.1V,VGS=0to10V
Output charge2) Qoss - 65 82 nC VDD=30V,VGS=0V
Table7Reversediode
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode continuous forward current IS- - 120 A TC=25°C
Diode pulse current IS,pulse - - 480 A TC=25°C
Diode forward voltage VSD - 1.0 1.2 V VGS=0V,IF=100A,Tj=25°C
Reverse recovery time2) trr - 54 86 ns VR=30V,IF=100A,diF/dt=100A/µs
Reverse recovery charge Qrr - 77 - nC VR=30V,IF=100A,diF/dt=100A/µs
1) See ″Gate charge waveforms″ for parameter definition
2) Defined by design. Not subject to production test
(imeon
7
OptiMOSTMPower-Transistor,60V
IPP029N06N
Rev.2.6,2015-02-10Final Data Sheet
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 25 50 75 100 125 150 175 200
0
20
40
60
80
100
120
140
160
Ptot=f(TC)
Diagram2:Draincurrent
TC[°C]
ID[A]
0 25 50 75 100 125 150 175 200
0
20
40
60
80
100
120
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
10-1 100101102
10-1
100
101
102
103
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-5 10-4 10-3 10-2 10-1
10-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tp);parameter:D=tp/T
(ifleon
8
OptiMOSTMPower-Transistor,60V
IPP029N06N
Rev.2.6,2015-02-10Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
40
80
120
160
200
240
280
320
360
400
7 V
10 V
6 V
5.5 V
5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.drain-sourceonresistance
ID[A]
RDS(on)[mΩ]
0 80 160 240 320 400
0
1
2
3
4
5
6
7
8
5 V 5.5 V 6 V
7 V
10 V
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
VGS[V]
ID[A]
02468
0
40
80
120
160
200
240
280
320
360
400
175 °C 25 °C
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Diagram8:Typ.forwardtransconductance
ID[A]
gfs[S]
0 20 40 60 80 100
0
50
100
150
200
gfs=f(ID);Tj=25°C
(imeon
9
OptiMOSTMPower-Transistor,60V
IPP029N06N
Rev.2.6,2015-02-10Final Data Sheet
Diagram9:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[mΩ]
-60 -20 20 60 100 140 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max
typ
RDS(on)=f(Tj);ID=100A;VGS=10V
Diagram10:Typ.gatethresholdvoltage
Tj[°C]
VGS(th)[V]
-60 -20 20 60 100 140 180
0
1
2
3
4
5
750 µA
75 µA
VGS(th)=f(Tj);VGS=VDS
Diagram11:Typ.capacitances
VDS[V]
C[pF]
0 20 40 60
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram12:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.5 1.0 1.5 2.0
100
101
102
103
25 °C
175 °C
IF=f(VSD);parameter:Tj
infineon V9 srm Own a“...
10
OptiMOSTMPower-Transistor,60V
IPP029N06N
Rev.2.6,2015-02-10Final Data Sheet
Diagram13:Avalanchecharacteristics
tAV[µs]
IAV[A]
100101102103
100
101
102
103
25 °C
100 °C
125 °C
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
Diagram14:Typ.gatecharge
Qgate[nC]
VGS[V]
0 10 20 30 40 50 60
0
2
4
6
8
10
12
12 V
30 V
48 V
VGS=f(Qgate);ID=100Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-60 -20 20 60 100 140 180
50
54
58
62
66
70
VBR(DSS)=f(Tj);ID=1mA
Gate charge waveforms
infineon H1 I I N I I D D I | l | ‘_ | | I: l | | I I | I— T F1 ' I I b . ! M | I f I b3 4 I _ I I I - I I | ' | . | . .1. I | _ I m c | | _|_ W MILLIMETERS INCHES MIN MAX MIN MAX DOCUMENT No. A 0.30 4.51 0.150 0.100 223300003310 A1 117 1,40 0.045 0.055 A2 215 272 0.005 0.107 SCALE 0 0 0 00 0 00 0.020 0.034 01 0 95 1.40 0.037 0.055 25 02 0 05 1.15 0.031 0.045 03 0 05 1,15 0020 0.045 0 2-5 C 0 33 0 so 0.013 0.020 5,“... D 14.01 1505 0.503 0.020 D‘ 5 5‘ 9 ‘5 “335 “372 EUROPEAN FROJECYION 02 1210 1310 0400 0515 E s 10 10.35 0.302 0.400 El 0 50 0 50 0.250 0.333 r/I m e 2.54 0.100 '\I V 01 5.00 0,200 N 3 3 ISSUE DATE HI 5 00 s 00 0.232 0.272 30.01.2009 L 13.00 14.00 0.512 0.551 L1 - 4.00 » 0.109 REVISION 0P 3 60 3 as 0.102 0.153 00 0 2,00 300 0.102 0.110
11
OptiMOSTMPower-Transistor,60V
IPP029N06N
Rev.2.6,2015-02-10Final Data Sheet
6PackageOutlines
Figure1OutlinePG-TO220-3,dimensionsinmm/inches
(ifileon
12
OptiMOSTMPower-Transistor,60V
IPP029N06N
Rev.2.6,2015-02-10Final Data Sheet
RevisionHistory
IPP029N06N
Revision:2015-02-10,Rev.2.6
Previous Revision
Revision Date Subjects (major changes since last revision)
2.5 2014-07-25 Rev.2.5
2.6 2015-02-10 Insert Rg min value = 0.65 Ohm
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