Name: IMZC120R007M2HXKSA1
Brand: Infineon Technologies
SKU: 448-IMZC120R007M2HXKSA1-ND
Price: 80.661 NZD
Availability: OutOfStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IMZC120R007M2HXKSA1
DigiKey Part Number	448-IMZC120R007M2HXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMZC120R007M2HXKSA1
Description	SIC DISCRETE
Manufacturer Standard Lead Time	39 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 201A (Tc) 711W (Tc) Through Hole PG-TO247-4-17
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolSiC™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	201A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Rds On (Max) @ Id, Vgs	7.5mOhm @ 93A, 18V
Vgs(th) (Max) @ Id	5.1V @ 29.1mA
Gate Charge (Qg) (Max) @ Vgs	176 nC @ 18 V
Vgs (Max)	+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds	6570 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	711W (Tc)
Operating Temperature	-55°C ~ 175°C
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-4-17
Package / Case	TO-247-4