IPA60R950C6XKSA1 Infineon Technologies | Discrete Semiconductor Products

IPA60R950C6XKSA1
cms-digikey-product-number	448-IPA60R950C6XKSA1-ND
cms-manufacturer	Infineon Technologies
cms-manufacturer-product-number	IPA60R950C6XKSA1
cms-description	MOSFET N-CH 600V 4.4A TO220-FP
cms-customer-reference
cms-detailed-description	N-Channel 600 V 4.4A (Tc) 26W (Tc) Through Hole PG-TO220-FP
Datasheet	Datasheet
cms-eda-cad-models	IPA60R950C6XKSA1 Models

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolMOS™
Packaging	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	950mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	280 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	26W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-FP
Package / Case	TO-220-3 Full Pack
Base Product Number	IPA60R950