Name: SCTW35N65G2V
Brand: STMicroelectronics
SKU: 497-SCTW35N65G2V-ND
Price: 15.35756 NZD
Availability: OutOfStock

SCTW35N65G2V is available for purchase but is not normally stocked.

Available Substitutes:

Similar

GeneSiC Semiconductor

In Stock: 1,036

Unit Price: $18.66000

Similar

Microchip Technology

In Stock: 57

Unit Price: $12.31000

Similar

Taiwan Semiconductor Corporation

In Stock: 300

Unit Price: $27.00000

Similar

Taiwan Semiconductor Corporation

In Stock: 295

Unit Price: $21.09000

Similar

Taiwan Semiconductor Corporation

In Stock: 275

Unit Price: $18.61000

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SCTW35N65G2V
DigiKey Part Number	497-SCTW35N65G2V-ND
Manufacturer	STMicroelectronics
Manufacturer Product Number	SCTW35N65G2V
Description	SICFET N-CH 650V 45A HIP247
Customer Reference
Detailed Description	N-Channel 650 V 45A (Tc) 240W (Tc) Through Hole HiP247™
Datasheet	Datasheet
EDA/CAD Models	SCTW35N65G2V Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	STMicroelectronics
Series	-
Packaging	Tube
Part Status	Last Time Buy
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V, 20V
Rds On (Max) @ Id, Vgs	67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	73 nC @ 20 V
Vgs (Max)	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds	1370 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	240W (Tc)
Operating Temperature	-55°C ~ 200°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Through Hole
Supplier Device Package	HiP247™
Package / Case	TO-247-3
Base Product Number	SCTW35