TO-220-3
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TK31E60X,S1X

DigiKey Part Number
TK31E60XS1X-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK31E60X,S1X
Description
MOSFET N-CH 600V 30.8A TO220
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 30.8A (Ta) 230W (Tc) Through Hole TO-220
Datasheet
 Datasheet
EDA/CAD Models
TK31E60X,S1X Models
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSIV-H
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
88mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
230W (Tc)
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
TK31E60
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In-Stock: 71
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Quantity
All prices are in NZD
Tube
QuantityUnit PriceExt Price
1$13.32000$13.32
50$7.27180$363.59
100$7.12420$712.42
500$5.83866$2,919.33
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without GST:$13.32000
Unit Price with GST:$15.31800