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N-Channel 650 V 21A (Tc) 208W (Tc) Through Hole TO-220AB
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHP21N65EF-GE3

DigiKey Part Number
SIHP21N65EF-GE3-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
SIHP21N65EF-GE3
Description
MOSFET N-CH 650V 21A TO220AB
Manufacturer Standard Lead Time
22 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 21A (Tc) 208W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
106 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2322 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
SIHP21
Product Questions and Answers

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Quantity
All prices are in NZD
Tube
QuantityUnit PriceExt Price
1$10.08000$10.08
10$6.73000$67.30
100$4.82540$482.54
500$4.01298$2,006.49
1,000$3.82283$3,822.83
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without GST:$10.08000
Unit Price with GST:$11.59200