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- Cree’s power and RF division is now known as Wolfspeed, A Cree Company. Wolfspeed is liberating power and wireless systems from the limitations of silicon by leading the innovation and commercialization of next-generation systems based on silicon carbide and gallium nitride.
CGH27015 Gallium-Nitride (GaN) High-Electron-Mobility-Transistor (HEMT)
Wolfspeed's CGH27015 GaN HEMT is designed for high-efficiency, high-gain, and wide bandwidth capabilities in amplifier applications.
CGHV40050F 50 V GaN Transistor
Wolfspeed’s CGHV40050 operates from a 50 V rail and offers a general-purpose, broadband solution to a variety of RF and microwave applications.
CG2H40045 RF Power GaN HEMT
Cree Wolfspeed's CG2H40045 RF Power GaN HEMT offers a general purpose, broadband solution to a variety of RF and microwave applications.
CMPA0060002F Power Amplifier
Wolfspeed's CMPA0060002F is a GaN HEMT MMIC distributed driver amplifier, which operates between 20 MHz to 6.0 GHz.
CG2H40010 GaN HEMT
Wolfspeed's CG2H40010 gallium nitride (GaN) high electron mobility transistor (HEMT) is available in a screw-down, flange package.
CGHV40180F GaN HEMT
Wolfspeed’s CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
Second-Generation C2M1000170D Silicon Carbide MOSFET
Duration: 5 minutes
Wolfspeed's Gen2 1700 V SiC MOSFET can reduce system cost while improving the reliability.
SiC Schottky Diodes in Non-Isolated LED Drivers
C3D1P7060Q diode has zero reverse recovery energy resulting in higher system efficiency, lower system temp, lower EMI emissions, and increased reliability.
SiC Diodes in Inverter Modules
Duration: 15 minutes
Wolfspeed’s Silicon Carbide (SiC) diodes and the benefits they provide when implemented into power inverter applications.
SiC Schottky Diodes
Active Power Factor Correction (PFC) basics, SiC Schottky selection guide, and design considerations.
Assembling a Packaged Wolfspeed GaN MMIC into a Test Fixture
Publish Date: 2018-04-26
See Cree's Gallium Nitride (GaN) transistors and MMICs for X-Band radar power amplifiers
Publish Date: 2016-07-08
Using SiC Devices to Improve an LED Driver
We step into Cree's lab where Adam shows some examples of Cree reference designs demonstrating how SiC can achieve high power density.
Publish Date: 2016-06-22
50kW Solar Inverter using SiC MOSFETs
Step into Wolfspeed's lab and view a demo of Wolfspeed's 50kW boost converter and see how this can help increase the power density of solar applications.
