150 V N-Channel X4-Class Ultra-Junction Power MOSFETs
IXYS N-Channel X4-Class power MOSFETs can be operated in parallel to meet higher current requirements
IXYS, now part of Littelfuse, introduces a power semiconductor device developed using a charge compensation principle and proprietary process technology, resulting in a power MOSFET that significantly reduces on-resistance [RDS(ON)] and gate charge (Qg). A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low Qg results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. The positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements.
- Low RDS(ON) and Qg
- dv/dt ruggedness
- Avalanche capability
- International standard packages
- Synchronous rectification in switching power supplies
- Motor control (48 V to 80 V systems)
- DC-DC converters
- Uninterruptible power supplies
- Electric forklifts
- Class-D audio amplifiers
- Telecom systems