RGA80TxX2EHRC High-Performance IGBT Solutions

ROHM Semiconductor RGA80TRX2EHRC15, RGA80TRX2HRC15, RGA80TSX2EHRC11, and RGA80TSX2HRC11 are high-performance insulated gate bipolar transistors (IGBTs). These IGBTs are designed to deliver superior efficiency and reliability in demanding automotive and industrial applications. Featuring a 1,200 V rating and a current capacity of 69 A, these IGBTs incorporate field stop trench technology, which ensures low switching and conduction losses. The built-in fast recovery diode (FRD) enhances performance by reducing recovery time, making these IGBTs ideal for applications requiring high-speed switching. With a short-circuit tolerance of 10 μs and compliance with AEC-Q101 standards, these IGBTs offer robust performance and durability. Their compact TO-247 package design facilitates easy integration into various systems, ensuring optimal thermal management and space efficiency.