ROHM Semiconductor

RGWxx65C Series Hybrid IGBTs with Built-In SiC Diode

ROHM's RGWxx65C series utilizes a SiC SBD as the freewheeling diode for the IGBT

Image of Rohm's RGWxx65C Series Hybrid IGBTs with Built-In SiC Diode The RGWxx65C series utilizes ROHM's low-loss SiC Schottky barrier diodes (SBD) in the IGBT's feedback block as a freewheeling diode that has almost no recovery energy and, thus, minimal diode switching loss. Additionally, since the recovery current does not have to be handled by the IGBT in turn-on mode, the IGBT turn-on loss is reduced significantly over silicon fast recovery diodes (FRDs) used in conventional IGBTs. Both effects together result in up to 67% lower loss over conventional IGBTs and 24% lower loss compared with super junction MOSFETs (SJ MOSFETs) when used in vehicle chargers. This effect provides good cost performance while contributing to lower power consumption in industrial and automotive applications.

Features

Reduces loss by 67% vs. conventional IGBTs, providing optimal cost performance for popular automotive electrical control units and industrial equipment.

RGWxx65C Series Hybrid IGBTs with Built-In SiC Diode

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
IGBT 650V 96A TO-247NRGW00TS65CHRC11IGBT 650V 96A TO-247N202 - Immediate$14.06View Details
IGBT 650V 64A TO-247NRGW60TS65CHRC11IGBT 650V 64A TO-247N342 - Immediate$25.91View Details
IGBT 650V 81A TO-247NRGW80TS65CHRC11IGBT 650V 81A TO-247N357 - Immediate$26.67View Details
IGBT TRENCH FS 650V 45A TO-3PFMRGW00TK65DGVC11IGBT TRENCH FS 650V 45A TO-3PFM425 - Immediate$15.28View Details
IGBT TRENCH FS 650V 45A TO-3PFMRGW00TK65GVC11IGBT TRENCH FS 650V 45A TO-3PFM0 - Immediate$5.68View Details
Published: 2021-09-27

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