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MG600Q2YMS3(DAE)

DigiKey Part Number
264-MG600Q2YMS3(DAE)-ND
Manufacturer
Manufacturer Product Number
MG600Q2YMS3(DAE)
Description
SIC MOSFET MODULE, 1200 V, 600 A
Manufacturer Standard Lead Time
11 Weeks
Customer Reference
Detailed Description
Mosfet Array 1200V (1.2kV) 600A (Tc) 2kW (Tc) Chassis Mount
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Manufacturer
Toshiba Semiconductor and Storage
Series
-
Packaging
Tray
Part Status
Active
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
600A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
5.6V @ 600mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
53000pF @ 600V
Power - Max
2kW (Tc)
Operating Temperature
150°C
Grade
-
Qualification
-
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
-
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In-Stock: 2
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All prices are in NZD
Tray
QuantityUnit PriceExt Price
1$5,321.45000$5,321.45
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without GST:$5,321.45000
Unit Price with GST:$6,119.66750