Ultra Junction 650 V X3 Class Power MOSFETs

IXYS, a Littelfuse Technology, developed the N-Channel ultra junction X3 class power MOSFETs using a charge compensation principle and proprietary process technology, these ultra junction MOSFETs provide the best-in-class figure of merit (on-resistance times gate charge), which translates into the lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. These devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft-switching power converters.