1,200 V SiC MOSFETs

Product Highlights > 1,200 V SiC MOSFETs

            1,200 V SiC MOSFETs
                    Nexperia MOSFETs are suitable for E-vehicle charging infrastructure and Photovoltaic inverters
    

Image of Nexperia's 1,200V SiC MOSFETs Nexperia's industry-leading 1,200 V silicon carbide (SiC) MOSFETs in D2PAK-7 surface mount device (SMD) packaging offer a choice of 30 mΩ, 40 mΩ, 60 mΩ, and 80 mΩ R_DS(ON) values. This announcement follows Nexperia’s release of two discrete SiC MOSFETs in 3-pin and 4-pin TO-247 packaging. This series SiC MOSFET portfolio is swiftly expanding to include devices with R_DS(ON) values of 17 mΩ, 30 mΩ, 40 mΩ, 60 mΩ, and 80 mΩ in flexible package options.

Features

Excellent R_DS(ON) temperature stability
Very low switching losses
Fast reverse recovery
Fast switching speed

Temperature-independent turn-off switching losses
Very fast and robust intrinsic body diode
Faster commutation and improved switching due to the additional Kelvin source pin

Applications

E-vehicle charging infrastructure
Photovoltaic inverters
Switch mode power supplies

Uninterruptable power supplies
Motor drives