1200 V Silicon Carbide (SiC) Diodes, MOSFETs, and Modules

ROHM introduces its next generation of SiC power devices and modules for improved power savings in many applications

Image of Rohm Semiconductor's 1200 V Silicon Carbide SiC DiodesSiC is emerging as the most viable candidate in the search for a next-generation, low-loss element due to its low ON resistance and superior characteristics under high temperatures. ROHM is developing SiC power devices and modules for improved power savings in a number of applications, from high efficiency inverters in DC/AC converters for solar/wind power supplies and electric/hybrid vehicles to power inverters for industrial equipment and air conditioners.

Features Applications
  • Low ON resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to driver
  • Pb-free lead plating
  • RoHS-compliant
  • Solar inverters
  • DC/DC converters
  • Switch-mode power supplies
  • Induction heating
  • Motor drives

1200 V Silicon Carbide SiC Diodes

ImageManufacturer Part NumberDescriptionAvailable QuantityPrice
SICFET N-CH 1200V 10A TO247SCT2450KECSICFET N-CH 1200V 10A TO2470 - Immediate$7.66View Details
SICFET N-CH 1200V 14A TO247SCT2280KECSICFET N-CH 1200V 14A TO2470 - Immediate$9.69View Details
SICFET N-CH 1200V 22A TO247SCT2160KECSICFET N-CH 1200V 22A TO2470 - Immediate$15.23View Details
SICFET N-CH 1200V 40A TO247SCT2080KECSICFET N-CH 1200V 40A TO2470 - Immediate$26.89View Details
SICFET N-CH 1200V 40A TO247SCH2080KECSICFET N-CH 1200V 40A TO2470 - ImmediateSee Page for PricingView Details
MOSFET 2N-CH 1200V 120A MODULEBSM120D12P2C005MOSFET 2N-CH 1200V 120A MODULE2 - Immediate$676.84View Details
MOSFET 2N-CH 1200V 204A MODULEBSM180D12P2C101MOSFET 2N-CH 1200V 204A MODULE1 - Immediate$822.29View Details
Published: 2015-07-06