Vishay / Siliconix

SiR626DP-T1-RE3 TrenchFET® Gen IV Power MOSFET

Vishay's SiR626DP-T1-RE3 60 V N-channel MOSFET offers the best-in-class RDS(ON) - Qg figure-of-merit (FOM)

Image of Vishay's SIR626DP-T1-RE3 TrenchFET® Gen IV Power MOSFET Vishay's SiR626DP-T1-RE3 TrenchFET Gen IV power MOSFET has industry-low on-resistance and low total gate charge. With a PowerPAK SO-8 package, it optimizes interconnection design reducing package resistance by 66%.

Features
  • TrenchFET Gen IV power MOSFET
  • Very low RDS - Qg FOM
  • Tuned for the lowest RDS - QOSS FOM

SPICE Device Model SiR626DP
SiR626DP R-C Thermal Model

Applications
  • Synchronous rectification
  • Primary side switches
  • DC/DC converters
  • Solar micro inverters
  • Motor drive switches
  • Battery and load switches
  • Industrial

SiR626DP-T1-RE3 TrenchFET® Gen IV Power MOSFET

ImageManufacturer Part NumberDescriptionDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Available QuantityPriceView Details
MOSFET N-CH 60V 100A PPAK SO-8SIR626DP-T1-RE3MOSFET N-CH 60V 100A PPAK SO-860 V100A (Tc)6V, 10V11925 - Immediate$3.57View Details
Published: 2017-12-05