GT50JR22(STA1,E,S)
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TK31J60W5,S1VQ

DigiKey Part Number
TK31J60W5S1VQ-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK31J60W5,S1VQ
Description
MOSFET N-CH 600V 30.8A TO3P
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 30.8A (Ta) 230W (Tc) Through Hole TO-3P(N)
Datasheet
 Datasheet
EDA/CAD Models
TK31J60W5,S1VQ Models
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSIV
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
88mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id
3.7V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
230W (Tc)
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-3P(N)
Package / Case
TO-3P-3, SC-65-3
Base Product Number
TK31J60
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In-Stock: 24
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Quantity
All prices are in NZD
Tube
QuantityUnit PriceExt Price
1$18.51000$18.51
25$11.24920$281.23
100$9.52060$952.06
500$8.88222$4,441.11
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without GST:$18.51000
Unit Price with GST:$21.28650