TO-247-3
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TO-247-3
TO-247-3

NTHL015N065SC1

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5556-NTHL015N065SC1-ND
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onsemi
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NTHL015N065SC1
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SILICON CARBIDE (SIC) MOSFET - 1
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19 Weeks
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N-Channel 650 V 163A (Tc) 643W (Tc) Through Hole TO-247-3
Datasheet
 Datasheet
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Mfr
onsemi
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
163A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
18mOhm @ 75A, 18V
Vgs(th) (Max) @ Id
4.3V @ 25mA
Gate Charge (Qg) (Max) @ Vgs
283 nC @ 18 V
Vgs (Max)
+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds
4790 pF @ 325 V
FET Feature
-
Power Dissipation (Max)
643W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
NTHL015
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In-Stock: 550
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Tube
cms-quantityUnit Pricecms-ext-price
1$52.05000$52.05
30$35.01533$1,050.46
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Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without GST:$52.05000
Unit Price with GST:$59.85750